| 1. | Investigation of plasma drift velocity vs time in intense electron beam diode
强流脉冲电子束二极管等离子体漂移速度的研究 |
| 2. | Average drift velocity
平均漂移速度 |
| 3. | Especially , the ionospheric electric field in hainan was studied according to the ionospheric plasma drift velocity by removing the neutral wind effect
特别是采用扣除中性风的方法，研究了海南地区电场的变化特性，并对海南地区的漂移变化因素进行了分析。 |
| 4. | The results show that the electron mean drift velocity is affected by the cathode radius , the impedance of the load diode , the inner radius of vanes and the input voltage
结果表明电子平均漂移速度决定于阴极杆半径、负载二极管阻抗、阳极慢波叶片内径和输入电压。 |
| 5. | Algan / gan hemt has high breakdown electric field , fast electron drift velocity and large electron concentration , so it has been used more and more in high frequency and large power fields
Algan / ganhemt由于具有击穿电压高、电子漂移速度快和电子浓度大等特点,已被越来越多地应用于高频及大功率领域。 |
| 6. | And the drift velocity and the average energy of electron in air are computed . the results obtained in this work will be of great importance to the research of discharges in atmosphere including dielectric barrier discharge at atmospheric pressure
通过模拟在大气常温下o _ 2 、 n _ 2及o _ 2 n _ 2的直流放电过程，所得结果对进一步了解大气常温下直流放电动力学的机理具有重要意义，对大气常温下介质阻挡放电研究也具有一定的参考价值。 |
| 7. | With the increasing initial orientation angle and length - width ratio , the drifting distance , the fluctuation of the orientation angle , lateral drifting velocity and rotation velocity all increase , while the final settling velocity decreases with the increasing length - width ratio
初始取向角和长宽比增大，则粒子的横向漂移以及取向角、侧向漂移速度和转动角速度的振荡幅度都增大；同时随着长宽比的增大，粒子的沉降速度相应减小。 |
| 8. | Silicon carbide is becoming the most promising semiconductor material for high temperature , high frequency and high power devices because of its superior properties such as wide band gap , high breakdown field , high electronics saturation drift velocity , and high thermal conductivity
Sic材料由于具有宽禁带、高临界击穿电场、高饱和电子漂移速度、较大的热导率等优良特性，因此成为制作高温、高频、大功率器件的理想半导体材料。 |
| 9. | Elastic collision and inelastic collision are considered in oxygen molecule , nitrogen molecule by electron impart . the mail simulation results were as follow : ( 1 ) the variations of drift velocity and the average energy of electron with the e / n in o2 and n2 are obtained . the number of electrons for excitation , ionization , dissociation and dissociative ionization collision with the e / n and the energy of electron are analyzed emphatically
考虑了各种弹性和非弹性碰撞过程，在纯氧气、纯氮气中，给出了不同简化场e n条件下的电子漂移速度和平均电子能量的变化；着重分析了激发、电离、分解及分解电离碰撞的粒子数随e n 、电子能量的变化，同时计算了激发发射光谱的波长。 |
| 10. | Several influence factors to result plasma drift in hainan were analyzed . in this paper the characteristics of ionospheric parameters variation were analyzed systematically and some new results in storm - time such as seasonal behaviors were obtained ; it is the first time to investigate the ionospheric drift behavior in hainan and some new results was obtained , the relationships between each two plasma drift velocity components in storm time in hainan were found and the electric filed variation in hainan ionosphere also was obtained ; the results also show that there are big differences of the ionosphere parameters bo and bl obtained from the data with that obtained from the iri - 2001 applied for hainan ; a new phenomena was found during a strong magnetic storm , that a layer with very strong electron density and density grad was found during the recovery phase of the storm , its horizontal scale is beyond 100km and temporal scale is about 2 hours , this phenomena repeated 3 times continuously . a type of negative disturbance in high and low latitude but positive disturbance in east - asia also has been found
本文较为系统地给出了海南地区电离层的参数变化特征，特别是得到了一些暴时与以往不同的季节特性；第一次给出了海南地区的电离层等离子体漂移特征，发现等离子体漂移暴时扰动在三个方向上有内在的联系，得到了电场变化曲线；研究结果还表明海南电离层的半厚指数和形状参数等与国际参考电离层iri - 2001存在很大差别；通过对强磁扰动事件期间的参数变化特性分析发现，在磁暴恢复相期间海南地区电离层底部存在一个电子密度非常大的高密度区，高密度区底部电子密度梯度随高度急剧增加，该区域的水平尺度可达100公里以上时间尺度约为2小时，连续出现过三次，这是一个在海南从来未发现的新现象；研究还发现了暴时东亚地区电离层扰动会出现高低纬负相而中纬正相的现象。 |
